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RN47A1JE Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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RN47A1JE Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page RN47A1JE 2007-11-01 3 Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 100 nA DC current gain hFE VCE = 5 V, IC = 1 mA 120 ⎯ 700 Collector-emitter saturation voltage VCE (sat) IC = 5 mA, IB = 0.25 mA ⎯ 0.1 0.3 V Transition frequency fT VCE = 10 V, IC = 5 mA ⎯ 250 ⎯ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 3 ⎯ pF Input resistor R1 ⎯ 3.29 4.7 6.11 k Ω Electrical Characteristics (Ta = 25°C) (Q2) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −100 nA DC current gain hFE VCE = −5 V, IC = −1 mA 120 ⎯ 700 Collector-emitter saturation voltage VCE (sat) IC = −5 mA, IB = −0.25 mA ⎯ −0.1 −0.3 V Transition frequency fT VCE = −10 V, IC = −5 mA ⎯ 200 ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 3 ⎯ pF Input resistor R1 ⎯ 3.29 4.7 6.11 k Ω |
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