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RN49A1FE Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # RN49A1FE
Description  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN49A1FE Datasheet(HTML) 1 Page - Toshiba Semiconductor

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RN49A1FE
2007-11-01
1
TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type
(PCT Process) (Transistor with Built-in Bias Resistor)
RN49A1FE
Switching, Inverter Circuit, Interface Circuit and Driver
Circuit Applications
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and saves assembly costs.
Equivalent Circuit and Bias Resistor Values
Q1
Q2
Q1
R1: 2.2 k
Ω, R2: 47 kΩ
Q2
R1: 22 k
Ω, R2: 47 kΩ
Q1: RN2105F equivalent
Q2: RN1108F equivalent
Marking
Equivalent Circuit (top view)
Unit: mm
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
JEITA
TOSHIBA
2-2N1G
Weight: 0.006 g (typ.)
R1
B
C
E
R1
B
C
E
6
54
123
Q1
Q2
1 5
4
6
3
1
2
5


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