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RN49A1FE Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN49A1FE Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page RN49A1FE 2007-11-01 1 TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A1FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and saves assembly costs. Equivalent Circuit and Bias Resistor Values Q1 Q2 Q1 R1: 2.2 k Ω, R2: 47 kΩ Q2 R1: 22 k Ω, R2: 47 kΩ Q1: RN2105F equivalent Q2: RN1108F equivalent Marking Equivalent Circuit (top view) Unit: mm 1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) JEDEC ― JEITA ― TOSHIBA 2-2N1G Weight: 0.006 g (typ.) R1 B C E R1 B C E 6 54 123 Q1 Q2 1 5 4 6 3 1 2 5 |
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