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RN1109ACT Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN1109ACT Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page RN1107ACT ~ RN1109ACT 2009-04-13 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Extra small package(CST3) is applicable for extra high density fabrication. • Incorporating a bias resistor into a transistor reduces the number of parts, which enables the manufacture of ever more compact equipment and saves assembly cost. • Complementary to RN2107ACT to RN2109ACT Equivalent Circuit and Bias Resistor Values Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage RN1107ACT to RN1109ACT VCEO 50 V RN1107ACT 6 RN1108ACT 7 Emitter-base voltage RN1109ACT VEBO 15 V Collector current IC 80 mA Collector power dissipation PC (Note1) 100 mW Junction temperature Tj 150 °C Storage temperature range RN1107ACT to RN1109ACT Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1 : Mounted on FR4 board (10 mm × 10 mm × 1 mmt) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-1J1A Weight: 0.75 mg (typ.) R1 B C E Type No. R1 (k Ω) R2 (k Ω) RN1107ACT 10 47 RN1108ACT 22 47 RN1109ACT 47 22 3 12 0.35±0.02 0.15±0.03 0.5±0.03 0.6±0.05 0.05±0.03 1.BASE 2.EMITTER 3.COLLECTOR CST3 TOP View |
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