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RN1112ACT Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN1112ACT Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page RN1112ACT, RN1113ACT 2009-04-13 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 100 nA DC current gain hFE VCE = 5 V, IC = 1 mA 120 ⎯ 700 Collector-emitter saturation voltage VCE (sat) IC = 5 mA, IB = 0.25 mA ⎯ ⎯ 0.15 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 0.7 ⎯ pF RN1112ACT 17.6 22 26.4 Input resistor RN1113ACT R1 ⎯ 37.6 47 56.4 k Ω |
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