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RN1969FS Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN1969FS
Description  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1969FS Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN1967FS~RN1969FS
2007-11-01
2
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 20 V, IE = 0
⎯
⎯
100
Collector cut-off current
RN1967FS~1969FS
ICEO
VCE = 20 V, IB = 0
⎯
⎯
500
nA
RN1967FS
VEB = 6V, IC = 0
0.088
⎯
0.131
RN1968FS
VEB = 7V, IC = 0
0.085
⎯
0.126
Emitter cut-off current
RN1969FS
IEBO
VEB = 15V, IC = 0
0.182
⎯
0.271
mA
RN1967FS
120
⎯
⎯
RN1968FS
120
⎯
⎯
DC current gain
RN1969FS
hFE
VCE = 5 V, IC = 10 mA
100
⎯
⎯
Collector-emitter
saturation voltage
RN1967FS~1969FS
VCE (sat)
IC = 5 mA,
IB = 0.25 mA
⎯
⎯
0.15
V
RN1967FS
0.7
⎯
1.5
RN1968FS
0.8
⎯
2.2
Input voltage (ON)
RN1969FS
VI (ON)
VCE = 0.2 V, IC = 5 mA
1.6
⎯
5.0
V
RN1967FS
0.5
⎯
1.0
RN1968FS
0.6
⎯
1.1
Input voltage (OFF)
RN1969FS
VI (OFF)
VCE = 5 V, IC = 0.1 mA
1.3
⎯
2.6
V
Collector output
capacitance
RN1967FS~1969FS
Cob
VCB = 10 V, IE = 0,
f
= 1 MHz
⎯
1.2
⎯
pF
RN1967FS
8
10
12
RN1968FS
17.6
22
26.4
Input resistor
RN1969FS
R1
⎯
37.6
47
56.4
k
Ω
RN1967FS
0.17
0.213
0.255
RN1968FS
0.374
0.468
0.562
Resistor ratio
RN1969FS
R1/R2
⎯
1.71
2.14
2.56


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