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IS61WV12816EDBLL Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc

Part # IS61WV12816EDBLL
Description  128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61WV12816EDBLL Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
IS61/64WV12816EDBLL
AC WAVEfORMS
WRITE CYCLE NO. 3(WE Controlled. OE isLOWDuringWriteCycle)(1)
DATA UNDEFINED
t WC
VALID ADDRESS
LOW
LOW
t PWE2
t AW
t HA
HIGH-Z
t PWB
t HD
t SA
t HZWE
ADDRESS
CE
UB, LB
WE
DOUT
DIN
OE
DATAIN VALID
t LZWE
t SD
UB_CEWR3.eps
WRITE CYCLE NO. 4(LB, UB Controlled,Back-to-BackWrite)(1,3)
DATA UNDEFINED
t WC
ADDRESS 1
ADDRESS 2
t WC
HIGH-Z
t PWB
WORD 1
LOW
WORD 2
UB_CEWR4.eps
t HD
t SA
t HZWE
ADDRESS
CE
UB, LB
WE
DOUT
DIN
OE
DATAIN
VALID
t LZWE
t SD
t PWB
DATAIN
VALID
t SD
t HD
t SA
t HA
t HA
Notes:
1. TheinternalWritetimeisdefinedbytheoverlapofCE=Low, UBand/orLB=Low,andWE=LOW.Allsignalsmustbein
validstatestoinitiateaWrite,butanycanbedeassertedtoterminatetheWrite.The
tsa,tHa, tsd,andtHdtimingisreferenced
totherisingorfallingedgeofthesignalthatterminatestheWrite.
2. TestedwithOEHIGHforaminimumof4nsbeforeWE=LOWtoplacetheI/OinaHIGH-Zstate.
3. WEmaybeheldLOWacrossmanyaddresscyclesandtheLB,UBpinscanbeusedtocontroltheWritefunction.


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