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CUS10F30 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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CUS10F30 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page CUS10F30 1 Schottky Barrier Diode Silicon Epitaxial CUS10F30 CUS10F30 CUS10F30 CUS10F30 1. 1. 1. 1. Applications Applications Applications Applications • High-Speed Switching 2. 2. 2. 2. Features Features Features Features (1) Low forward voltage: VF(3) = 0.43 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit USC 1: Cathode 2: Anode 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Reverse voltage Average rectified current Non-repetitive peak forward surge current Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Note (Note 1) (Note 2) Rating 30 1 5 125 -55 to 125 Unit V A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic circuit board of 25 mm × 25 mm, Pad dimension of 2 mm × 2 mm. Note 2: Measured with a 10 ms pulse. 2012-06-12 Rev.4.0 |
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