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MT3S20TU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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MT3S20TU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page MT3S20TU 2009-12-09 1 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) Marking Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 1.5 V Collector current IC 80 mA Base current IB 10 mA Collector power dissipation PC(Note1) 900 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note.1 : The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit : mm UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight: 6.6mg (typ.) 1.7±0.1 2.1±0.1 1 2 3 1.BASE 2.EMITTER 3.COLLECTOR M U 1 2 3 |
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