MT3S20TU

2009-12-09

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S20TU

VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

FEATURES

• Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz)

Marking

Characteristics

Symbol

Rating

Unit

Collector-base voltage

20

V

Collector-emitter voltage

12

V

Emitter-base voltage

1.5

V

Collector current

80

mA

Base current

10

mA

Collector power dissipation

900

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note.1 : The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))

Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit

: mm

UFM

JEDEC

-

JEITA

-

TOSHIBA

2-2U1B

Weight: 6.6mg (typ.)

1.7±0.1

2.1±0.1

1

2

3

1.BASE

2.EMITTER

3.COLLECTOR

M U

1

2

3