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MT3S111 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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MT3S111 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page MT3S111 2009-03-30 1 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) • High Gain:|S21e| 2=12 dB (typ.) (@ f=1 GHz) Marking Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 13 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 0.6 V Collector-current IC 100 mA Base-current IB 10 mA Collector power dissipation PC 160 mW Collector power dissipation PC (Note 1) 700 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) R 5 1. Base 2. Emitter 3. Collector |
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