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TLWLF1109A Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLWLF1109A Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 13 page  TLWLF1109A(T11 1 LED Lamps InGaN and Phosphor TLWLF1109A(T11 TLWLF1109A(T11 TLWLF1109A(T11 TLWLF1109A(T11 1. 1. 1. 1. Applications Applications Applications Applications • General Lighting • Backlighting • Pilot Lamps 2. 2. 2. 2. Features Features Features Features (1) Size: 3.2 (L) mm × 2.9 (W) mm × 1.9 (H) mm (2) Luminous intensity: IV = 2800 mcd (typ.) @IF = 40 mA (3) LED chip and phosphor (4) Emitting material: InGaN (5) Color: White (Warm White) (6) High heat-resistant type: Topr/Tstg = -40 to 100 (7) High current driving: IF = 50 mA (max) (8) Standard embossed tape packing: 4-mm pitch: T11 type (2000 pcs/reel), 8-mm tape/reel 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit 1: Cathode 2: Anode 3: Anode 4: Anode 4-3W1S 2012-02-24 Rev.1.0 |
Similar Part No. - TLWLF1109A |
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Similar Description - TLWLF1109A |
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