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TB7106F Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TB7106F Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 16 page TB7106F 2011-11-05 3 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input pin voltage VIN -0.3~25 V Bootstrap pin voltage VBOOT -0.3~28 V Bootstrap pin - Switch pin voltage VBOOT - VLX -0.3~6 V Switch pin voltage (Note1) VLX -0.3~25 V Feedback pin voltage VFB -0.3~6 V Enable pin voltage VEN -0.3~25 V Soft-start pin voltage Vss -0.3~6 V Error amplifier phase compensation pin voltage VCOMP -0.3~6 V Switch pin current ILX -3.6 A Power dissipation (Note 2) PD 2.2 W Operating junction temperature Tjopr -40~125 ℃ Junction temperature (Note 3) Tj 150 °C Strage temperature Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Note 1: The switch pin voltage (VLX) doesn’t include the peak voltage generated by TB7106F’s switching. Thermal Resistance Characteristics Characteristics Symbol Max Unit Thermal resistance, junction to ambient Rth (j-a) 44.6(Note2) °C/W Thermal resistance, junction to case (Tc=25℃) Rth (j-c) 4.17 °C/W Note 2: Note 3: The TB7106F may go into thermal shutdown at the rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be exceeded. Glass epoxy board Material: FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Single-pulse measurement: pulse width t=10(s) |
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