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TCR2EN115 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TCR2EN115 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 15 page TCR2EN series 2012-05-23 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 5.5 V Control voltage VCT -0.3 to 5.5 V Output voltage VOUT -0.3 to VIN + 0.3 V Output current IOUT 200 mA Power dissipation PD 300 (Note1) mW Operation temperature range Topr −40 to 85 °C Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.8mm, both sides of board Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5mm x 24 Pin Assignment (top view) VOUT CONTROL GND *Center electrode should be connected to GND or Open VIN 1 2 4 * 3 |
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Similar Description - TCR2EN115 |
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