Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

IS42SM32200G Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc

Part # IS42SM32200G
Description  512K x 32Bits x 4Banks Low Power Synchronous DRAM
Download  27 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS42SM32200G Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc

Back Button IS42SM32200G Datasheet HTML 6Page - Integrated Silicon Solution, Inc IS42SM32200G Datasheet HTML 7Page - Integrated Silicon Solution, Inc IS42SM32200G Datasheet HTML 8Page - Integrated Silicon Solution, Inc IS42SM32200G Datasheet HTML 9Page - Integrated Silicon Solution, Inc IS42SM32200G Datasheet HTML 10Page - Integrated Silicon Solution, Inc IS42SM32200G Datasheet HTML 11Page - Integrated Silicon Solution, Inc IS42SM32200G Datasheet HTML 12Page - Integrated Silicon Solution, Inc IS42SM32200G Datasheet HTML 13Page - Integrated Silicon Solution, Inc IS42SM32200G Datasheet HTML 14Page - Integrated Silicon Solution, Inc Next Button
Zoom Inzoom in Zoom Outzoom out
 10 / 27 page
background image
IS42SM32200G
CAS Latency
The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of
d
h l
b
h
lk
f
d
d
lk d
d h l
output data. The latency can beset to two or three clocks. If aREADcommand is registered at clock edgen,and the latency is
m
clocks, the data will be available by clock edge
n+ m. The DQs will start driving as a result of the clock edge one cycle earlier (n + m -
1), and provided that the relevant access times are met, the data will be valid by clock edge
n+ m. For example, assuming that the
clock cycle time is such that all relevant access times are met, if a READ command is registered at T0 and the latency is programmed to
two clocks, the DQs will start driving after T1 and the data will be valid by T2, as shown in Figure 6. Reserved states should not be used
as unknown operation or incompatibility with future versions may result.
CLK
COMMAND
NOP
NOP
T0
T1
T2
T3
READ
Figure6: CAS Latency
DQ
Dout
tLZ
tOH
tAC
CAS Latency=2
CLK
T0
T1
T2
T3
T4
CLK
COMMAND
DQ
NOP
NOP
Dout
tLZ
tOH
tAC
CAS Latency=3
NOP
READ
Operating Mode
The normal operating mode is selected by setting M7 and M8 to zero; the other combinations of values for M7 and M8 are reserved
DON’T CARE
UNDEFINED
for future use and/or test modes. The programmed burst length applies to both READ and WRITE bursts. Test modes and reserved
states should not be used because unknown operation or incompatibility with future versions may result.
Write Burst Mode
When M9 = 0, the burst length programmed via M0-M2 applies to both READ and WRITE bursts; when M9 = 1, the programmed
burst length applies to READ bursts, but write accesses are single-location (nonburst) accesses.
10
Rev. A | July 2010
www.issi.com - DRAM@issi.com


Similar Part No. - IS42SM32200G

ManufacturerPart #DatasheetDescription
logo
Integrated Silicon Solu...
IS42SM32200K-6BLI ISSI-IS42SM32200K-6BLI Datasheet
540Kb / 33P
   512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32200K-75BLI ISSI-IS42SM32200K-75BLI Datasheet
540Kb / 33P
   512K x 32Bits x 4Banks Mobile Synchronous DRAM
More results

Similar Description - IS42SM32200G

ManufacturerPart #DatasheetDescription
logo
Integrated Silicon Solu...
IS42VM32200G ISSI-IS42VM32200G Datasheet
284Kb / 27P
   512K x 32Bits x 4Banks Low Power Synchronous DRAM
logo
Hynix Semiconductor
HY57V643220D HYNIX-HY57V643220D Datasheet
229Kb / 13P
   4Banks x 512K x 32bits Synchronous DRAM
logo
Integrated Silicon Solu...
IS42SM32200K-6BLI ISSI-IS42SM32200K-6BLI Datasheet
540Kb / 33P
   512K x 32Bits x 4Banks Mobile Synchronous DRAM
logo
Hynix Semiconductor
HY5V52F HYNIX-HY5V52F Datasheet
336Kb / 13P
   4Banks x 2M x 32bits Synchronous DRAM
HY5Y7A2DLM-HF HYNIX-HY5Y7A2DLM-HF Datasheet
939Kb / 26P
   4Banks x 4M x 32bits Synchronous DRAM
logo
Emerging Memory & Logic...
RMS132AW EMLSI-RMS132AW Datasheet
231Kb / 26P
   512K x 32Bits x 2Banks Low Power Synchronous DRAM
RMS132UAW EMLSI-RMS132UAW Datasheet
239Kb / 26P
   512K x 32Bits x 2Banks Low Power Synchronous DRAM
logo
Integrated Silicon Solu...
IS42VM32100D-6BLI ISSI-IS42VM32100D-6BLI Datasheet
846Kb / 34P
   512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42SM32400G-6BLI ISSI-IS42SM32400G-6BLI Datasheet
545Kb / 33P
   1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32400F ISSI-IS42VM32400F Datasheet
451Kb / 27P
   1M x 32Bits x 4Banks Mobile Synchronous DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com