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TS9008DCX5 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS9008DCX5 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 9 page TS9008 300mA High PSRR Low Noise CMOS LDO 2/9 Version: D12 Absolute Maximum Rating Parameter Symbol Limit Unit VIN Pin Voltage VIN GND - 0.3 to GND + 6 V Output Voltage VOUT GND - 0.3 to VIN + 0.3 V Enable Voltage VEN GND - 0.3 to GND + 6 V Power Dissipation PD 350 mW Storage Temperature Range TSTG -40 to +150 °C Operating Temperature Range TOP -40 to +85 °C Junction Temperature TJ -40 to +125 °C Thermal Resistance from Junction to case θJC 230 °C/W Thermal Resistance from Junction to ambient θJA 280 °C/W Note: θJA is measured with the PCB copper area of approximately 1 in 2 (Multi-layer). Electrical Characteristics (VIN=VOUT+1V or VIN=2.8V whichever is greater, CIN=COUT=1uF, TA=25°C, unless otherwise noted) Characteristics Symbol Conditions Min Typ Max Units Input Voltage VIN (Note1) 2.8 -- 5.5 V Output Voltage Accuracy ∆VOUT IOUT=1mA -2 -- +2 % Quiescent Current IQ IOUT =0mA -- 30 60 µA Dropout Voltage (Note2) VDROP IOUT=300mA 1.0V≦VOUT≦2.0V -- 1500 -- mV 1.5V<VOUT≦2.0V -- 1000 -- 2.0V<VOUT≦2.8V -- 350 -- 2.8V<VOUT≦3.3V -- 250 -- Current Limit ILIMIT RLOAD=1Ω 300 -- -- mA Line Regulation ∆VLINE IOUT =1mA, VIN=VOUT+1V to 5V -- 1 5 mV Load Regulation (Note3) ∆VLOAD IOUT =0m~150mA -- 6 20 mV Ripple Rejection PSRR COUT=1uF, IOUT =1mA F=1KHz -- 73 -- dB F=10K -- 60 -- Enable Input Threshold VENH 1.4 -- -- V VENL -- -- 0.4 Enable Pin Current IEH VEN=VIN -- -- 0.1 µA Shutdown Current ISD VIN=3.6V, VEN=0V -- -- 1 µA Temperature Coefficient TC IOUT=1mA, VIN=5V -- 50 -- ppm/°C Temperature Shutdown TS -- 160 -- ºC Temperature Shutdown Hysterisis TSH -- 25 -- ºC Note: 1. Minimum VIN voltage is defined by output adds a dropout voltage. 2. The dropout voltage is defined as VIN-VOUT, which is measured when VOUT drop about 100mV. 3. Regulation is measured at constant junction temperature by using pulsed testing with a low ON time. |
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