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IDH08G65C5 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IDH08G65C5 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 2 page Product Brief ThinQ!™ Generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. V br at 650V Improved Figure of Merit (Q c x Vf) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating 10 years manufacturing of SiC diodes Benefits Higher safety margin against Overvoltage; best match with CoolMOS™ 650V products Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant High quality know-how and capacity in SiC diode manufacture Applications Telecom/Server SMPS Solar/UPS PC Silverbox LED/LCD TV Motor Drives HID lighting www.infineon.com/sic Features 650V SiC thinQ!™ Generation 5 diodes Your way is our way: improve efficiency and solution costs Experimental results Efficiency comparison among the three IFX generations of 8A SiC diodes a) Absolute values b) Referred to thinQ!™ Gen 5 (CCM PFC, High line, Pout max=1800 W, f SW=65 kHz, THS=60°C, MOSFET: IPW60R075CP) 97.0 97.5 98.0 98.5 10% 20% 30% 40% 50% 60% 70% 80%90% 100% - 0.15 - 0.10 - 0.05 0.00 0.05 0.10 0.15 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% Output Power [% nominal] Output Power [% nominal] Generation 5 Generation 3 Generation 2 Generation 5 Generation 3 Generation 2 a) b) |
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