Product Brief

ThinQ!™ Generation 5 represents Infineon’s leading edge technology for

SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering

process, already introduced with G3, is now combined with a new, more

compact design and thin wafer technology. The result is a new family of

products showing improved efficiency over all load conditions, coming from

both the improved thermal characteristics and a lower figure of merit (Q

The new thinQ!™ Generation 5 has been designed to complement our 650V

CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.

„

V

„

Improved Figure of Merit (Q

„

No reverse recovery charge

„

Soft switching reverse

recovery waveform

„

Temperature independent

switching behavior

„

High operating temperature

(T

„

Improved surge capability

„

Pb-free lead plating

„

10 years manufacturing of SiC diodes

Benefits

„

Higher safety margin against

Overvoltage; best match with

CoolMOS™ 650V products

„

Improved efficiency over all

load conditions

„

Increased efficiency compared to

Silicon Diode alternatives

„

Reduced EMI compared to snappier

Silicon diode reverse recovery

waveform

„

Highly stable switching performance

„

Reduced cooling requirements

„

Reduced risks of thermal runaway

„

RoHS compliant

„

High quality know-how and capacity

in SiC diode manufacture

Applications

„

Telecom/Server SMPS

„

Solar/UPS

„

PC Silverbox

„

LED/LCD TV

„

Motor Drives

„

HID lighting

www.infineon.com/sic

Features

650V SiC thinQ!™ Generation 5 diodes

Your way is our way: improve efficiency and solution costs

Experimental results

Efficiency comparison among the three

IFX generations of 8A SiC diodes

a) Absolute values

b) Referred to thinQ!™ Gen 5

(CCM PFC, High line, Pout max=1800 W,

f

MOSFET: IPW60R075CP)

97.0

97.5

98.0

98.5

10%

20%

30%

40%

50%

60%

70%

80%90%

100%

- 0.15

- 0.10

- 0.05

0.00

0.05

0.10

0.15

10%

20%

30%

40%

50%

60%

70%

80%

90% 100%

Output Power [% nominal]

Output Power [% nominal]

Generation 5

Generation 3

Generation 2

Generation 5

Generation 3

Generation 2

a)

b)