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IPD50R280CE Datasheet(PDF) 8 Page - Infineon Technologies AG |
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IPD50R280CE Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 20 page 500V CoolMOS TM CE 8 Application Note AN 2012-04 V1.0 April 2012 Figure 3: simplified small signal MOSFET equivalent circuit Because of this capacitance reduction the Eon and Eoff of the 500V CE is about half in comparison to a standard MOSFET. Furthermore this reduction of capacitances results also in a reduced gate charge Qg which gives the benefit of reduced driving losses, and the possibility to use a lower cost driver with less gate drive capability. Figure 4 represents the capacitance comparison of the 500V CE (280mOhm) vs. a comparable standard MOSFET. Figure 4: capacitance comparison 500V CE vs. standard MOSFET 1 10 100 1000 10000 0 100 200 300 400 500 VDS [V] Capacitances IPA50R280CE vs. Standard MOSFET IPA50R280CE Ciss IPA50R280CE Coss IPA50R280CE Crss standard MOS Ciss standard MOS Coss standard MOS Crss |
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