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STRH8N10 Datasheet(PDF) 9 Page - STMicroelectronics |
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STRH8N10 Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 18 page STRH8N10 Radiation characteristics Doc ID 010029 Rev 2 9/18 Figure 2. Single event effect, SOA Figure 3. Single event effect, bias circuit(a) a. Bias condition during radiation refer to Table 12: Single event effect (SEE), safe operating area (SOA) . 0 10 20 30 40 50 60 70 80 90 100 -20 -15 -10 -5 0 Vgs (V) Kr (32 MeV.cm²/mg) |
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