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CM35MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2012

6

CHIP LOCATION (Top view)

Dimension in mm, tolerance: ±1 mm

Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: FWDi (*=U/V/W), DiBr: ClampDi, CR*P/CR*N: ConvDi (*=R/S/T), Th: NTC thermistor

TEST CIRCUIT AND WAVEFORMS

t

t

f

t

r

t

d( o n )

i

C

10%

90 %

90 %

R

G

-V

GE

Load

0 V

0 A

+

0

v

CE

v

GE

0 V

t

d ( o ff)

t

i

E

i

C

P1

N1

*

G*P

G*N

Es

*:U, V, W

t

0 A

Switching characteristics test circuit and waveforms

t

0

t

0

t

0 V

t

0 A

IGBT Turn-on switching energy

IGBT Turn-off switching energy

FWDi Reverse recovery energy

Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)