CM75RX-24S datasheet(3/13 Pages) MITSUBISHI

Part #	CM75RX-24S

Description	HIGH POWER SWITCHING USE INSULATED TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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< IGBT MODULES >

CM75RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2012

3

ELECTRICAL CHARACTERISTICS (cont; T j=25 °C, unless otherwise specified)

INVERTER PART IGBT/FWDi

Limits

Symbol

Item

Conditions

Min.

Typ.

Max.

Unit

IE=75 A

(Note5) ,

T j =25 °C

-

1.80

2.25

G-E short-circuited,

T j =125 °C

-

1.80

-

(Terminal)

T j =150 °C

-

1.80

-

V

IE=75 A

(Note5) ,

T j =25 °C

-

1.70

2.15

G-E short-circuited,

T j =125 °C

-

1.70

-

VEC

(Note1)

Emitter-collector voltage

(Chip)

T j =150 °C

-

1.70

-

V

trr

(Note1)

Reverse recovery time

VCC=600 V, IE=75 A, VGE=±15 V,

-

300

ns

Qrr

(Note1)

Reverse recovery charge

RG=8.2 Ω, Inductive load

-

4.0

-

μC

Eon

Turn-on switching energy per pulse

VCC=600 V, IC=IE=75 A,

-

7.3

-

Eoff

Turn-off switching energy per pulse

VGE=±15 V, RG=8.2 Ω, T j =150 °C,

-

8.0

-

mJ

Err

(Note1)

Reverse recovery energy per pulse

Inductive load

-

6.9

-

mJ

Main terminals-chip, per switch,

RCC'+EE'

Internal lead resistance

TC=25 °C

(Note4)

-

2.4

mΩ

rg

Internal gate resistance

Per switch

-

0

-

Ω

BRAKE PART IGBT/CLAMPDi

Limits

Symbol

Item

Conditions

Min.

Typ.

Max.

Unit

ICES

Collector-emitter cut-off current

VCE=VCES, G-E short-circuited

-

1

mA

IGES

Gate-emitter leakage current

VGE=VGES, C-E short-circuited

-

0.5

μA

VGE(th)

Gate-emitter threshold voltage

IC=5 mA, VCE=10 V

5.4

6.0

6.6

V

IC=50 A

(Note5) ,

T j =25 °C

-

1.80

2.25

VGE=15 V,

T j =125 °C

-

2.00

-

(Terminal)

T j =150 °C

-

2.05

-

V

IC=50 A

(Note5) ,

T j =25 °C

-

1.70

2.15

VGE=15 V,

T j =125 °C

-

1.90

-

VCEsat

Collector-emitter saturation voltage

(Chip)

T j =150 °C

-

1.95

-

V

C ies

Input capacitance

-

5.0

C oes

Output capacitance

-

1.0

C re s

Reverse transfer capacitance

VCE=10 V, G-E short-circuited

-

0.08

nF

QG

Gate charge

VCC=600 V, IC=50 A, VGE=15 V

-

117

-

nC

t d( on)

Turn-on delay time

-

300

t r

Rise time

VCC=600 V, IC=50 A, VGE=±15 V,

-

200

t d( o f f)

Turn-off delay time

-

600

t f

Fall time

RG=13 Ω, Inductive load

-

300

ns

IRRM

Repetitive peak reverse current

VR=VRRM, G-E short-circuited

-

1

mA

IE=50 A

(Note5) ,

T j =25 °C

-

1.80

2.25

G-E short-circuited,

T j =125 °C

-

1.80

-

(Terminal)

T j =150 °C

-

1.80

-

V

IE=50 A

(Note5) ,

T j =25 °C

-

1.70

2.15

G-E short-circuited,

T j =125 °C

-

1.70

-

VF

Forward voltage

(Chip)

T j =150 °C

-

1.70

-

V

trr

(Note.1)

Reverse recovery time

VCC=600 V, IE=50 A, VGE=±15 V,

-

300

ns

Qrr

(Note.1)

Reverse recovery charge

RG=13 Ω, Inductive load

-

2.7

-

μC

Eon

Turn-on switching energy per pulse

VCC=600 V, IC=IE=50 A,

-

5.5

-

Eoff

Turn-off switching energy per pulse

VGE=±15 V, RG=13 Ω, T j =150 °C,

-

5.3

-

mJ

Err

(Note.1)

Reverse recovery energy per pulse

Inductive load

-

4.5

-

mJ

rg

Internal gate resistance

-

0

-

Ω

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