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CM100RX-24S Datasheet(PDF) 7 Page - Mitsubishi Electric Semiconductor |
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CM100RX-24S Datasheet(HTML) 7 Page - Mitsubishi Electric Semiconductor |
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7 / 13 page  < IGBT MODULES > CM100RX-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : September 2012 7 PERFORMANCE CURVES INVERTER PART OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj=25 °C (Chip) VGE=15 V (Chip) 0 50 100 150 200 02468 10 0 0.5 1 1.5 2 2.5 3 3.5 0 50 100 150 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj=25 °C (Chip) G-E short-circuited (Chip) 0 2 4 6 8 10 6 8 10 12 14 16 18 20 1 10 100 1000 0 0.5 1 1.5 2 2.5 3 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj=150 °C Tj=125 °C Tj=25 °C Tj=125 °C Tj=25 °C IC=200 A IC=100 A IC=40 A VGE=20 V 12 V 11 V 10 V 9 V 13.5 V 15 V Tj=150 °C |
Similar Part No. - CM100RX-24S |
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Similar Description - CM100RX-24S |
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