Feb. 2009

2

MITSUBISHI IGBT MODULES

CM100TU-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

V

V

°C

°C

±15V

Ω

Resistive load

die / dt = –200A /

µs

Junction to case, IGBT part (Per 1/6 module)

Junction to case, FWDi part (Per 1/6 module)

Case to heat sink, conductive grease applied

(Per 1/6 module)

(Note 6)

(Note 4)

Collector cutoff current

Gate-emitter

threshold voltage

Gate-leakage current

Collector-emitter

saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Emitter-collector voltage

Reverse recovery time

Reverse recovery charge

Thermal resistance

(Note 5)

Contact thermal resistance

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

°C

Pulse

(Note 1)

°C

Pulse

(Note 1)

°C

—

—

Charged part to base plate, f = 60Hz, AC 1 minute

Main terminals M5 screw

Mounting M5 screw

Typical value

Collector current

Emitter current

1200

±20

100

200

100

200

650

–40 ~ +150

–40 ~ +125

2500

2.5 ~ 3.5

2.5 ~ 3.5

680

Symbol

Item

Conditions

Unit

Ratings

V

V

A

A

A

A

W

°C

°C

Vrms

N·m

N·m

g

(Note 2)

—

—

Min

Typ

Max

1

0.5

3.7

—

15

5

3

—

100

200

300

350

3.2

300

—

0.19

0.35

—

mA

µA

nF

nF

nF

nC

ns

ns

ns

ns

V

ns

µC

K/W

K/W

K/W

—

—

2.9

2.85

—

—

—

375

—

—

—

—

—

—

0.55

—

—

0.09

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

(Note 2)

Symbol

Item

Test Conditions

Limits

Unit

6

4.5

°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

6. Typical value is measured by using thermally conductive grease of

7.5