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CM450DY-24S Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM450DY-24S Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 9 page < IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : July 2012 2 ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) Symbol Item Conditions Rating Unit VCES Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ±20 V IC DC, TC=125 °C (Note.2, 4) 410 * ICRM Collector current Pulse, Repetitive (Note.3) 900 A Ptot Total power dissipation TC=25 °C (Note.2, 4) 3330 W IE (Note.1) TC=25 °C (Note.2, 4) 410 * IERM (Note.1) Emitter current Pulse, Repetitive (Note.3) 900 A V is ol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V T jm ax Maximum junction temperature - 175 T cm a x Maximum case temperature (Note.4) 125 °C T j opr Operating junction temperature - -40 ~ +150 T st g Storage temperature - -40 ~ +125 °C ELECTRICAL CHARACTERISTICS (T j=25 °C, unless otherwise specified) Limits Symbol Item Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=45 mA, VCE=10 V 5.4 6.0 6.6 V IC=450 A (Note.5) , T j =25 °C - 1.80 2.25 VGE=15 V, Terminal, T j =125 °C - 2.05 - Refer to figure of test circuit T j =150 °C - 2.10 - V IC=450 A (Note.5) , T j =25 °C - 1.70 2.15 VGE=15 V, T j =125 °C - 1.90 - VCEsat Collector-emitter saturation voltage Chip T j =150 °C - 1.95 - V C ies Input capacitance - - 45 C oes Output capacitance - - 9.0 C re s Reverse transfer capacitance VCE=10 V, G-E short-circuited - - 0.75 nF QG Gate charge VCC=600 V, IC=450 A, VGE=15 V - 1050 - nC t d( on) Turn-on delay time - - 800 t r Rise time VCC=600 V, IC=450 A, VGE=±15 V, - - 200 t d( o f f) Turn-off delay time - - 600 t f Fall time RG=0 Ω, Inductive load - - 300 ns IE=450 A (Note.5) , T j =25 °C - 1.85 2.30 G-E short-circuited, Terminal, T j =125 °C - 1.85 - Refer to figure of test circuit T j =150 °C - 1.85 - V IE=450 A (Note.5) , T j =25 °C - 1.70 2.15 G-E short-circuited, T j =125 °C - 1.70 - VEC (Note.1) Emitter-collector voltage Chip T j =150 °C - 1.70 - V trr (Note.1) Reverse recovery time VCC=600 V, IE=450 A, VGE=±15 V, - - 300 ns Qrr (Note.1) Reverse recovery charge RG=0 Ω, Inductive load - 24 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=450 A, - 54.9 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, - 48 - mJ Err (Note.1) Reverse recovery energy per pulse T j =150 °C, Inductive load - 32.4 - mJ RCC'+EE' Internal lead resistance Main terminals -chip, per switch, T C =25 °C - - 0.7 mΩ rg Internal gate resistance Per switch - 4.3 - Ω |
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