CM450DY-24S datasheet(2/9 Pages) MITSUBISHI

Part #	CM450DY-24S

Description	HIGH POWER SWITCHING USE INSULATED TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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< IGBT MODULES >

CM450DY-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : July 2012

2

ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)

Symbol

Item

Conditions

Rating

Unit

VCES

Collector-emitter voltage

G-E short-circuited

1200

V

VGES

Gate-emitter voltage

C-E short-circuited

±20

V

IC

DC, TC=125 °C

(Note.2, 4)

410 *

ICRM

Collector current

Pulse, Repetitive

(Note.3)

900

A

Ptot

Total power dissipation

TC=25 °C

(Note.2, 4)

3330

W

IE

(Note.1)

TC=25 °C

(Note.2, 4)

410 *

IERM

(Note.1)

Emitter current

Pulse, Repetitive (Note.3)

900

A

V is ol

Isolation voltage

Terminals to base plate, RMS, f=60 Hz, AC 1 min

2500

V

T jm ax

Maximum junction temperature

-

175

T cm a x

Maximum case temperature

(Note.4)

125

°C

T j opr

Operating junction temperature

-

-40 ~ +150

T st g

Storage temperature

-

-40 ~ +125

°C

ELECTRICAL CHARACTERISTICS (T j=25 °C, unless otherwise specified)

Limits

Symbol

Item

Conditions

Min.

Typ.

Max.

Unit

ICES

Collector-emitter cut-off current

VCE=VCES, G-E short-circuited

-

1.0

mA

IGES

Gate-emitter leakage current

VGE=VGES, C-E short-circuited

-

0.5

μA

VGE(th)

Gate-emitter threshold voltage

IC=45 mA, VCE=10 V

5.4

6.0

6.6

V

IC=450 A

(Note.5) ,

T j =25 °C

-

1.80

2.25

VGE=15 V, Terminal,

T j =125 °C

-

2.05

-

Refer to figure of test circuit

T j =150 °C

-

2.10

-

V

IC=450 A

(Note.5) ,

T j =25 °C

-

1.70

2.15

VGE=15 V,

T j =125 °C

-

1.90

-

VCEsat

Collector-emitter saturation voltage

Chip

T j =150 °C

-

1.95

-

V

C ies

Input capacitance

-

45

C oes

Output capacitance

-

9.0

C re s

Reverse transfer capacitance

VCE=10 V, G-E short-circuited

-

0.75

nF

QG

Gate charge

VCC=600 V, IC=450 A, VGE=15 V

-

1050

-

nC

t d( on)

Turn-on delay time

-

800

t r

Rise time

VCC=600 V, IC=450 A, VGE=±15 V,

-

200

t d( o f f)

Turn-off delay time

-

600

t f

Fall time

RG=0 Ω, Inductive load

-

300

ns

IE=450 A

(Note.5) ,

T j =25 °C

-

1.85

2.30

G-E short-circuited, Terminal,

T j =125 °C

-

1.85

-

Refer to figure of test circuit

T j =150 °C

-

1.85

-

V

IE=450 A

(Note.5) ,

T j =25 °C

-

1.70

2.15

G-E short-circuited,

T j =125 °C

-

1.70

-

VEC

(Note.1)

Emitter-collector voltage

Chip

T j =150 °C

-

1.70

-

V

trr

(Note.1)

Reverse recovery time

VCC=600 V, IE=450 A, VGE=±15 V,

-

300

ns

Qrr

(Note.1)

Reverse recovery charge

RG=0 Ω, Inductive load

-

24

-

μC

Eon

Turn-on switching energy per pulse

VCC=600 V, IC=IE=450 A,

-

54.9

-

Eoff

Turn-off switching energy per pulse

VGE=±15 V, RG=0 Ω,

-

48

-

mJ

Err

(Note.1)

Reverse recovery energy per pulse

T j =150 °C, Inductive load

-

32.4

-

mJ

RCC'+EE'

Internal lead resistance

Main terminals -chip, per switch, T C =25 °C

-

0.7

mΩ

rg

Internal gate resistance

Per switch

-

4.3

-

Ω

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