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CM1800HC-34H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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CM1800HC-34H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 6 page Jul. 2005 Rth(j-c)Q Rth(j-c)R Rth(c-f) Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K K/kW K/kW K/kW Thermal resistance Contact thermal resistance Min Typ Max 8.0 13.0 — — — 7.0 — — — THERMAL CHARACTERISTICS Symbol Item Conditions Limits Unit M — CTI da ds LC-E(int) M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part N·m kg — mm mm nH Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Min Typ Max 13.0 6.0 2.0 — — — — — — — — 1.5 — — — 10 7.0 3.0 1.0 — 600 19.5 32.0 — MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM1800HC-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
Similar Part No. - CM1800HC-34H_09 |
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Similar Description - CM1800HC-34H_09 |
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