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M54513FP Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M54513FP Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 3 page  Aug. 1999 PIN CONFIGURATION MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY CIRCUIT DIAGRAM DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semicon- ductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES High breakdown voltage (BVCEO ≥ 40V) Synchronizing current (Ic(max) = 50mA) Wide operating temperature range (Ta = –20 to +75 °C) APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals FUNCTION The M54513P and M54513FP each have eight circuits con- sisting of NPN transistors. These ICs have resistance of 2 k Ω at inputs and of 13.6kΩ between the base and emitter. The GND is used in common in each circuit. The transistors allow synchronous flow of 50mA collector current. A maximum of 40V voltage can be applied between the collector and emitter. The M54513FP is enclosed in a molded small flat package, enabling space-saving design. 13.6K 2K INPUT OUTPUT GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω The eight circuits share the GND. 1 IN1 → IN2 → IN3 → IN4 → IN5 → IN6 → IN7 → →O8 IN8 → GND NC NC : No connection NC : No connection 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 →O7 →O6 →O5 →O4 →O3 →O2 →O1 Package type 18P4G(P) 1 NC INPUT OUTPUT INPUT OUTPUT IN1 → IN2 → IN3 → IN4 → IN5 → IN6 → →O8 IN7 → IN8 → 2 3 4 5 6 7 8 9 20 19 18 17 16 15 14 13 12 GND 10 11 →O7 →O6 →O5 →O4 →O2 →O3 →O1 NC NC Package type 20P2N-A(FP) |
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