Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54562P/FP

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

—

—

—

—

—

—

—

—

#

—

5

—

0

2.4

0

–0.5 ~ +50

50

–0.5 ~ +30

–500

–500

50

1.79(P)/1.10(FP)

–20 ~ +75

–55 ~ +125

V

V

V

50

30

0.2

Parameter

Limits

Symbol

Unit

0

0

—

—

–350

–100

mA

100

2.4

2.0

0.75

4.7

15.0

–2.4

100

Symbol

Unit

Parameter

Test conditions

Limits

—

1.75

1.50

0.48

2.8

5.6

–1.2

—

+ : The typical values are those measured under ambient temperature (Ta) of 25

°C. There is no guarantee that these values are obtained under any

conditions.

# : Unused I/O pins must be connected to GND.

µA

mA

V

µA

V

mA

Ratings

Unit

Symbol

Parameter

Conditions

Collector-emitter voltage

Supply voltage

Input voltage

Output current

Clamping diode forward current

Clamping diode reverse voltage

Power dissipation

Operating temperature

Storage temperature

#

Output, L

Current per circuit output, H

Ta = 25

°C, when mounted on board

V

V

V

mA

mA

V

W

°C

°C

# : Unused I/O pins must be connected to GND.

Supply voltage

Duty Cycle

P : no more than 8%

FP : no more than 5%

Duty Cycle

P : no more than 55%

FP : no more than 30%

Output current

(Current per 1 cir-

cuit when 8 circuits

are coming on si-

multaneously)

“H” input voltage

“L” input voltage

min

typ

max

min

max

Supply leak current

Supply current

Clamping diode forward voltage

Clamping diode reverse current

Collector-emitter saturation voltage

Input current

ns

ns

—

—

110

5200

—

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

Turn-on time

Turn-off time