Mitsubishi Semiconductors

MGFS38E3336-01

Specifications are subject to change without notice.

3.3 - 3.6GHz HBT MMIC MODULE

MITSUBISHI ELECTRIC CORPORATION

Rev. 1.1

(2/24)

Sep. -2010

ABSOLUTE MAXIMUM RATINGS

Value

Symbol

Parameter

Conditions

Min.

Max.

Unit

Vc1,Vc2,Vc3,

Vc4,Vcb

Collector Supply Voltage

-

-

8

V

Vref

Reference Voltage

-

-

3

V

Vcont

ATT Control Voltage

-

-

3.5

V

Ic1+Icb

100

mA

Ic2

100

mA

Ic3

300

mA

Ic4

Operation Current

-

1000

mA

Pin

Input Power

-

-

3

dBm

Tc(op)

Operation Temperature

Pout

28.5dBm

-40

+85

C

Tstg

Storage Temperature

-

-40

+125

C

-

Duty Cycle

-

-

50

%

*NOTE : Ta=25

C unless otherwise noted, Zin=Zout=50

Each maximum rating is guaranteed independently.

Please take care that MGFS38E3336 is operated under these conditions at the worst

case on your terminal.

ELECTRICAL CHARACTERISTICS

Value

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

f

Frequency

3300

3600

MHz

Gp

Gain

36.0

dB

EVM

EVM

2.5

%

Vdet

Power Detector Voltage

1.8

V

ATT

Control Gain Step

23

dB

Ict

Operating Current

Vc1=Vc2=Vc3=Vc4=5V,

Vref=2.85V, Vcont=0V

Pout=28.5dBm

64QAM OFDM Modulation

Duty Cycle <= 50%

950

mA

*NOTE :

Ta=25

**

ATT=Gain(@Vcont=0V)－Gain(@Vcont=3.3V)

MOISTURE SENSITIVITY LEVEL

:

LEVEL3