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PM200DVA120 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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PM200DVA120 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
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6 / 6 page  MITSUBISHI <INTELLIGENT POWER MODULES> PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE Jun. 2005 101 10–3 100 7 5 3 2 10–2 7 5 3 2 10–1 7 5 3 2 7 5 3 2 10–323 5 710–223 5 710–123 5 7100 23 5 7101 Single Pulse Per unit base = Rth(j – c)Q = 0.121 °C/W 101 10–3 100 7 5 3 2 10–2 7 5 3 2 10–1 7 5 3 2 7 5 3 2 10–323 5 710–223 5 710–123 5 7100 23 5 7101 Single Pulse Per unit base = Rth(j – c)F = 0.18 °C/W TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT per 1 element) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi per 1 element) TIME (s) |
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Similar Description - PM200DVA120 |
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