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ERJ-8GEYJ510 Datasheet(PDF) 6 Page - RF Micro Devices

Part # ERJ-8GEYJ510
Description  380W GaN WIDEBAND PULSED
Download  11 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

ERJ-8GEYJ510 Datasheet(HTML) 6 Page - RF Micro Devices

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RF3928B
DS120503
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Typical Performance in Standard Fixed-tuned Test Fixture (T=25°C, Unless
Noted)
0
200
400
600
800
1000
1200
0
20
40
60
80
100
120
140
MaximumCaseTemperature (°C)
PulsePowerDissipation DeratingCurve
(Basedon Maximum package temperature andRth)
300S Pulse Width, 10% Duty Cycle
100S Pulse Width, 10% Duty Cycle
20
25
30
35
40
45
50
55
60
240
260
280
300
320
340
360
380
400
10
100
1000
Pulse Width (μsec)
Pout/DE versus Pulse Width, f = 3200MHz
(Pulsed 10% duty cycle, V
D = 65V, IDQ = 440mA)
Output Power
Drain Efficiency
35
40
45
50
55
60
65
250
275
300
325
350
375
400
0
5
10
15
20
Duty Cycle (%)
Pout/DE versus Duty Cycle, f = 3200MHz
(Pulsed ,100μs pulse, V
D = 65V,IDQ = 440mA)
Pout
Eff


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