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ERJ-6GEYJ120V Datasheet(PDF) 3 Page - RF Micro Devices

Part # ERJ-6GEYJ120V
Description  380W GaN WIDEBAND PULSED
Download  11 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

ERJ-6GEYJ120V Datasheet(HTML) 3 Page - RF Micro Devices

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RF3928B
DS120503
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
RF Functional Test
(continued)
Power Gain
11.2
11.8
dB
F=3150MHz, PIN=44dBm
Input Return Loss
-6
dB
F=3150MHz, PIN=30dBm
Output Power
55.5
56
dBm
F=3150MHz, PIN=44dBm
Drain Efficiency
45
50
%
Small Signal Gain
13
dB
F=3400MHz, PIN=30dBm
Power Gain
11.3
11.8
dB
F=3400MHz, PIN=44dBm
Input Return Loss
-6
dB
F=3400MHz, PIN=30dBm
Output Power
55.5
56
dBm
F=3400MHz, PIN=44dBm
Drain Efficiency
45
50
%
RF Typical Performance
[1, 2]
Frequency Range
2800
3400
MHz
Small Signal Gain
13
dB
F=3100MHz, PIN=30dBm
Power Gain
11.8
dB
POUT=55.8dBm
Gain Variation with Temperature
-0.015
dB/°C
At peak output power
Output Power (PSAT)
55.8
dBm
Peak output power
380
W
Peak output power
Drain Efficiency
50
%
At peak output power
[1] Test Conditions: Pulsed Operation, PW=100
s, DC=10%, VDS=65V, IDQ=440mA, T=25ºC
[2] Performance in a standard tuned test fixture
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.


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