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GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Ordering Information

BiFET HBT

RF IN

VG

Pin 1 (CUT)

RF OUT

VD

Pin 2

GND

BASE

RFHA1020

280W GaN WIDE-BAND PULSED

POWER AMPLIFIER

The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band

pulsed radar, air traffic control and surveillance and general purpose broadband

amplifier applications. Using an advanced high power density Gallium Nitride (GaN)

semiconductor process, these high performance amplifiers achieve high output

power, high efficiency, and flat gain over a broad frequency range in a single pack-

age. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged

ceramic package. The package provides excellent thermal stability through the use

of advanced heat sink and power dissipation technologies. Ease of integration is

accomplished through the incorporation of single, optimized matching networks

that provide wideband gain and power performance in a single amplifier.

Features



Wideband Operation: 1.2GHz

to 1.4GHz



Advanced GaN HEMT

Technology



Advanced Heat-Sink

Technology



Supports Multiple Pulse

Conditions



10% to 20% Duty Cycle



100

s to 1ms Pulse Width



Integrated Matching

Components for High

Terminal Impedances



50V Operation Typical

Performance:



Output Pulsed Power: 280W



Pulse Width: 100

s, Duty Cycle

10%



Small Signal Gain: 15dB



High Efficiency (55%)



- 40°C to 85°C Operating

Temperature

Applications



Radar



Air Traffic Control and

Surveillance



General Purpose Broadband

Amplifiers

RFHA1020S2

2-Piece sample bag

RFHA1020SB

5-Piece bag

RFHA1020SQ

25-Piece bag

RFHA1020SR

50 Pieces on 7” short reel

RFHA1020TR13

250 Pieces on 13” reel

RFHA1020PCBA-410 Fully assembled evaluation board 1.2GHz to 1.4GHz; 50V

operation

DS120508



Package: Flanged Ceramic, 2 Pin