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ECJ-2VB1H103K Datasheet(PDF) 5 Page - RF Micro Devices |
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ECJ-2VB1H103K Datasheet(HTML) 5 Page - RF Micro Devices |
5 / 10 page 5 of 10 RFHA1020 DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 10 20 30 40 50 60 70 12 13 14 15 16 17 18 45 46 47 48 49 50 51 52 53 54 55 Output Power (dBm) Gain/ Efficiency versus P OUT , f = 1300MHz (Pulsed 10% duty cycle, 100μS, V D = 50V, IDQ = 440mA) Gain Drain Eff 40 45 50 55 60 65 70 200 210 220 230 240 250 260 270 280 290 300 310 320 10 100 1000 Pulse Width (usec) P OUT/DE versus Pulse Width, f = 1300MHz (Pulsed 10% duty cycle, V D = 50V, IDQ = 440mA) Output Power Drain Efficiency 40 45 50 55 60 65 70 200 225 250 275 300 325 350 10 20 30 40 50 60 Duty Cycle (%) P OUT/DE versus Duty Cycle, f = 1300MHz (Pulsed, 100μs pulse, V D = 50V, IDQ = 440mA) Output Power Drain Efficiency 0 200 400 600 800 1000 1200 0 20 40 60 80 100 120 140 MaximumCaseTemperature (°C) PulsePowerDissipation DeratingCurve (Basedon Maximum package temperature andRth) 1mS Pulse Width, 10% Duty Cycle 100 S Pulse Width, 10% Duty Cycle |
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