ERJ-8GEYJ100V datasheet(9/14 Pages) RFMD

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ERJ-8GEYJ100V Datasheet(PDF) 9 Page - RF Micro Devices

Part #	ERJ-8GEYJ100V

Description	120W GaN WIDEBAND POWER AMPLIFIER

Download	14 Pages

Scroll/Zoom	100%

Manufacturer	RFMD [RF Micro Devices]

Direct Link	http://www.rfmd.com

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9 / 14 page

9 of 14

RF3934

DS120306

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Bias Instruction for RF3934 Evaluation Board

ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.

Evaluation board requires additional external fan cooling.

Connect all supplies before powering evaluation board.

1. Connect RF cables at RFIN and RFOUT.

2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal.

3. Apply -8V to VG.

4. Apply 48V to VD.

5. Increase VG until drain current reaches 440mA or desired bias point.

6. Turn on the RF input.

Manufacturer	Part #	Datasheet	Description
RF Micro Devices	ERJ-8GEYJ100V	923Kb / 11P	280W GaN WIDEBAND PULSED POWER
	ERJ-8GEYJ100V	773Kb / 11P	380W GaN WIDEBAND PULSED
	ERJ-8GEYJ100V	1Mb / 14P	30W GaN WIDEBAND POWER AMPLIFIER
	ERJ-8GEYJ100V	1Mb / 14P	60W GaN WIDEBAND POWER AMPLIFIER
	ERJ-8GEYJ100V	1Mb / 14P	90W GaN WIDE-BAND POWER AMPLIFIER

Manufacturer	Part #	Datasheet	Description
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M/A-COM Technology Solu...	MAGX-011087	1Mb / 9P	GaN Wideband Power Amplifier
RF Micro Devices	RF3931	1Mb / 14P	30W GaN WIDEBAND POWER AMPLIFIER
	RF3932	1Mb / 14P	60W GaN WIDEBAND POWER AMPLIFIER
	RF3934D	689Kb / 9P	120W GaN on SiC Power Amplifier Die
	RFHA1023	1Mb / 10P	225W GaN Wideband Pulsed Power Amplifier
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M/A-COM Technology Solu...	NPA1006	1Mb / 13P	GaN Wideband Power Amplifier, 28 V, 12.5 W
Qorvo, Inc	QPB0220N	763Kb / 11P	2 - 18 GHz Wideband GaN Amplifier Rev. C, April 2023

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