MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21962-4/-4A/-4C/-4W

TRANSFER-MOLD TYPE

INSULATED TYPE

Aug. 2007

10

Fig. 11 AN EXAMPLE OF TYPICAL DIP-IPM APPLICATION CIRCUIT

Note 1 : Input drive is High-Active type. There is a 3.3k

Ω(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the

wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on

and turn-off threshold voltage.

2: Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible.

Ω.

4: To prevent erroneous protection, the wiring of A, B, C should be as short as possible.

5: The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2

µs. SC interrupting time might vary with the

wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4.

6: All capacitors should be mounted as close to the terminals of the DIP-IPM as possible. (C1: good temperature, frequency character-

istic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.)

7: To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible.

Generally a 0.1-0.22

µF snubber between the P-N1 terminals is recommended.

leave another one open.

9: It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.

10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended

to connect control GND and power GND at only a point.

15V line

DIP-IPM

C3

C2

C2

C2

C1

C1

C1

5V line

COM

GND

F

o

C

B

A

R1

N1

C4

CIN

N

W

V

U

P

Fo

C3

HVIC

LVIC

Shunt

resistor

Long wiring here might cause SC

level fluctuation and malfunction.

C1: Electrolytic capacitor with good temperature characteristics

0.22~2

µF R-category ceramic capacitor for noise filtering

C2,C3:

Long GND wiring here might

generate noise to input and

cause IGBT malfunction.

Long wiring here might

cause short-circuit.

Long wiring here might

cause short-circuit.

M

M

Bootstrap negative

electrodes should be

connected to U, V, W

terminals directly and

separated from the

main output wires.