MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4E/-4AE/-4CE/-4EW

TRANSFER-MOLD TYPE

INSULATED TYPE

Aug. 2007

7

Fig. 7 THE DIP-IPM INTERNAL CIRCUIT

DIP-IPM

GND

Fo

HVIC

LVIC

CIN

CIN

N

W

V

U

P

COM

Fo

IGBT1

IGBT2

IGBT3

IGBT4

IGBT5

IGBT6

Di1

Di2

Di3

Di4

Di5

Di6

V

V

V

V/

µs

µs

kHz

Supply voltage

Control supply voltage

Control supply voltage

Control supply variation

Arm shoot-through blocking time

PWM input frequency

Applied between P-N

≤ 100°C

≤ 100°C, Tj ≤ 125°C

400

16.5

18.5

1

—

20

Condition

Symbol

Parameter

Limits

Min.

Typ.

Max.

0

13.5

13.0

–1

1.5

—

Unit

RECOMMENDED OPERATION CONDITIONS

300

15.0

15.0

—

—

—

Note 8 : The allowable r.m.s. current value depends on the actual application conditions.

9: IPM might not make response if the input signal pulse width is less than the recommended minimum value.

PWIN(on)

PWIN(off)

Allowable r.m.s. current

Allowable minimum input

pulse width

P.F = 0.8, sinusoidal PWM,

(Note 8)

(Note 9)

Arms

µs

V

0.5

0.5

–5.0

—

—

—

—

—

5.0

—

—

—

—

4.0

2.5