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STPS30150C Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS30150C Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 11 page Characteristics STPS30150C 2/11 Doc ID 7757 Rev 8 1 Characteristics When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x R th(j-c)(Per diode) + P(diode 2) x Rth(c) Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 150 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current δ = 0.5 TO-220FPAB Tc =120 °C Per diode Per device 15 A TO-220AB TO-247/D2PAK Tc = 155 °C 30 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 220 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 10500 W Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature (1) 1. condition to avoid thermal runaway for a diode on its own heatsink 175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 3. Thermal resistances Symbol Parameter Value Unit Rth (j-c) Junction to case TO-220FPAB Per diode Total 4 3.3 °C/W TO-220AB/D2PAK Per diode Total 1.6 0.85 TO-247 Per diode Total 1.5 0.8 Rth (c) Coupling TO-220FPAB 2.6 TO-220AB/D2PAK/TO-247 0.1 dPtot dTj --------------- 1 Rth j a – () -------------------------- < |
Similar Part No. - STPS30150C_10 |
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Similar Description - STPS30150C_10 |
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