RA07M4452M_10 datasheet(3/9 Pages) MITSUBISHI

Part #	RA07M4452M

Description	RoHS Compliance , 440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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3 / 9 page

Silicon RF Power Semiconductors

RoHS COMPLIANCE

RA07M4452M

30 Jun 2010

3/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

OUTPUT POWER, TOTAL EFFICIENCY,

2nd, 3

rd HARMONICS versus FREQUENCY

and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

0

1

2

3

4

5

6

7

8

9

10

430

450

470

490

510

530

FREQUENCY f(MHz)

0

10

20

30

40

50

60

70

80

90

100

V

DD=7.2V

P

in=50m W

P

out @V GG=3.5V

η

T @Pout=6.5W

ρ

in @Pout=6.5W

0

10

20

30

40

50

-10-5

0

5

10

1520

INPUT POWER Pin(dBm)

0

2

4

6

8

10

f=440MHz,

V

DD=7.2V ,

V

GG=3.5V

P

out

IDD

Gp

0

10

20

30

40

50

-10-5

0

5

1015

20

INPUT POWER Pin(dBm)

0

2

4

6

8

10

f=480MHz,

V

DD=7.2V ,

V

GG=3.5V

P

out

Gp

IDD

-70

-60

-50

-40

-30

-20

430

450

470

490

510

530

FREQUENCY f(MHz)

V

DD=7.2V

P

in=50m W

2nd @P

out=6.5W

3

rd @P

out=6.5W

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

0

2

4

6

8

10

12

14

16

4

5

6

789

DRAIN VOLTAGE VDD(V)

0

2

4

6

8

P

out

f=440MHz,

V

GG=3.5V ,

P

in=50m W

IDD

0

10

20

30

40

50

-10

-5

0

5

10

15

20

INPUT POWER Pin(dBm)

0

2

4

6

8

10

f=520MHz,

V

DD=7.2V ,

V

GG=3.5V

P

out

Gp

IDD

0

2

4

6

8

10

12

14

16

4

567

89

DRAIN VOLTAGE VDD(V)

0

2

4

6

8

P

out

IDD

f=480MHz,

V

GG=3.5V ,

P

in=50m W

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