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RA20H8087M Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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RA20H8087M Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 10 page  <Silicon RF Power Modules > RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO Publication Date : Jul.2011 5 OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE versus GATE VOLTAGE OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 0 10 20 30 40 50 60 2.5 3 3.5 4 4.5 5 5.5 GATE VOLTAGE VGG(V) 0 2 4 6 8 10 12 Pout f=825MHz, VDD=12.5V, Pin=50mW I DD 0 10 20 30 40 50 60 2.5 3 3.5 4 4.5 5 5.5 GATE VOLTAGE VGG(V) 0 2 4 6 8 10 12 Pout f=851MHz, VDD=12.5V, Pin=50mW I DD 0 10 20 30 40 50 60 2.5 3 3.5 4 4.5 5 5.5 GATE VOLTAGE VGG(V) 0 2 4 6 8 10 12 Pout f=870MHz, VDD=12.5V, Pin=50mW IDD TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) |
Similar Part No. - RA20H8087M |
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