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RA33H1516M1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # RA33H1516M1
Description  RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA33H1516M1 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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< Silicon RF Power Modules >
RA33H1516M1
RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO
Publication Date : Oct．2011
3
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
2
nd, 3
rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
0
10
20
30
40
50
150
155
160
165
170
FREQUENCY f(MHz)
0
20
40
60
80
100
VDD=12.5V
VGG=5V
Pin=10mW
Pout
T
in
0
10
20
30
40
50
60
-15
-10
-5
0
5
10
15
INPUT POWER Pin(dBm)
0
2
4
6
8
10
12
f=154MHz,
VDD=12.5V,
VGG=5V
Pout
IDD
Gp
0
10
20
30
40
50
60
-15
-10
-5
0
5
10
15
INPUT POWER Pin(dBm)
0
2
4
6
8
10
12
f=158MHz,
VDD=12.5V,
VGG=5V
Pout
Gp
IDD
-80
-70
-60
-50
-40
-30
-20
150
155
160
165
170
FREQUENCY f(MHz)
VDD=12.5V
VGG=5V
Pin=10mW
2
nd
3
rd
0
10
20
30
40
50
60
-15
-10
-5
0
5
10
15
INPUT POWER Pin(dBm)
0
2
4
6
8
10
12
f=162MHz,
VDD=12.5V,
VGG=5V
Pout
Gp
IDD


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