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RA45H7687M1-101 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # RA45H7687M1-101
Description  RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA45H7687M1-101 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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Publication Date : Oct.2011
1
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for
12.8-volt mobile radios that operate in the 763- to 870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small
leakage current flows into the drain and the nominal output signal
(Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the gate
voltage 1 is kept in 3.4V. The nominal output power becomes
available at the state that VGG2 is 4V (typical) and 5V (maximum).
At this point, VGG1 has to be kept in 3.4V.
At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0
@ VDD=12.8V, VGG=0V)
• Pout>45W, T>33%
@VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
• Broadband Frequency Range: 763-870MHz
• Metal cap structure that makes the improvements of RF radiation
simple
• Low-Power Control Current IGG1+IGG2=0.4mA (typ)
@ VGG1=3.4V, VGG2=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output
power with the input power.
RoHS COMPLIANCE
• RA45H7687M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA45H7687M1-101
Antistatic tray,
10 modules/tray
4
1
5
2
3
1
RF Input added Gate Voltage 1(Pin&VGG1)
2
Gate Voltage 2(VGG2), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
BLOCK DIAGRAM
PACKAGE CODE: H2M


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