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RD01MUS1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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RD01MUS1 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 7 page < Silicon RF Power MOS FET (Discrete) > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W Publication Date : Oct.2011 3 TYPICAL CHARACTERISTICS Vdd-Po CHARACTERISTICS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 6 8 10 12 14 Vdd(V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Po Idd Ta=25°C f=520MHz Pin=30mW Idq=100mA Zg=ZI=50 ohm Pin-Po CHARACTERISTICS 0 5 10 15 20 25 30 35 -10 0 10 20 Pin(dBm) 30 40 50 60 70 80 90 100 Ta=+25°C f=520MHz Vdd=7.2V Idq=100mA Po ηd Gp Pin-Po CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 Pin(mW) 0 20 40 60 80 100 Po ηd Idd Ta=25°C f=520MHz Vdd=7.2V Idq=100mA |
Similar Part No. - RD01MUS1_11 |
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Similar Description - RD01MUS1_11 |
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