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RD01MUS2 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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RD01MUS2 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
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4 / 7 page  < Silicon RF Power MOS FET (Discrete) > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W Publication Date : Oct．2011 4 TEST CIRCUIT(f=520MHz) 13mm 18mm 17.5mm 62pF 4.7kOHM C1 C2 W 6.5mm W RD01MUS2 24pF 30mm Vdd Vgg RF-in RF-OUT 240pF 5.5mm 3mm L4 3pF 25.5mm 10pF 4mm Note:Boad material Glass epoxi substrate Micro strip line width=1.0mm、50 OHM、er:4.8、t=0.6mm L1：Enameled wire 5 Turns、D：0.43mm、2.46mmO.D C1、C2:1000ｐF、0.022μF in parallel 11mm 10μF、50V 68 OHM 4mm 62pF 4mm 68pF W 5mm INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 520MHz Zin* Zout* Zo=50 Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W Zin* =3.11+j11.56 Zout*=11.64+j4.74 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of output impedance 520MHz Zin* 520MHz Zout* |
Similar Part No. - RD01MUS2 |
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Similar Description - RD01MUS2 |
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