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RD04HMS2 Datasheet(PDF) 10 Page - Mitsubishi Electric Semiconductor |
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RD04HMS2 Datasheet(HTML) 10 Page - Mitsubishi Electric Semiconductor |
10 / 21 page < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W Publication Date : Oct.2011 10 890-950MHz-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) 0 2 4 6 8 10 12 14 16 880 890 900 910 920 930 940 950 960 f (MHz) 0 10 20 30 40 50 60 70 80 Pout ηD Gp Idd Frequency Characteristics @f=890 to 950MHz Ta=+25deg.C, Vds=12.5V,Idq=0.1A, Pin=0.2W |
Similar Part No. - RD04HMS2 |
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Similar Description - RD04HMS2 |
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