RD04HMS2

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W

Publication Date : Oct．2011

10

890-950MHz-band TYPICAL CHARACTERISTICS

(These are only typical curves and devices are not necessarily guaranteed at these curves.)

0

2

4

6

8

10

12

14

16

880

890

900

910

920

930

940

950

960

f (MHz)

0

10

20

30

40

50

60

70

80

Pout

ηD

Gp

Idd

Frequency Characteristics @f=890 to 950MHz

Ta=+25deg.C, Vds=12.5V,Idq=0.1A, Pin=0.2W