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RD30HVF1 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # RD30HVF1
Description  RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RD30HVF1 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
RoHS COMPLIANT
RD30HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
Drain to source voltage
Vgs=0V
30
V
VGSS
Gate to source voltage
Vds=0V
+/-20
V
Pch
Channel dissipation
Tc=25°C
75
W
Pin
Input power
Zg=Zl=50
2.5
W
ID
Drain current
-
7
A
Tch
Channel temperature
-
175
°C
Tstg
Storage temperature
-
-40 to +175
°C
Rth j-c
Thermal resistance
junction to case
2.0
°C/W
Note 1: Above parameters are guaranteed independently.
OUTLINE DRAWING
R1.6
4-C1
2
2.8+/-0.3
3
18.0+/-0.3
22.0+/-0.3
7.6+/-0.3
1
7.2+/-0.5
PIN
1.Drain
2.Source
3.Gate
UNIT:mm


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