UF5305L-TA3-T datasheet(3/6 Pages) UTC

Part #	UF5305L-TA3-T

Description	-31A, -55V P-CHANNEL POWER MOSFET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 6 page

UF5305

Preliminary

POWER MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-842.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250µA

-55

V

Breakdown Voltage Temperature

Coefficient

∆BVDSS/∆TJ Reference to 25°C, ID=-1mA

-0.034

V/°C

Drain-Source Leakage Current

IDSS

VDS=-55V, VGS=0V

-25

µA

VDS=-44V, VGS=0V, TJ=150°C

-250

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=20V, VDS=0V

100

nA

Reverse

VGS=-20V, VDS=0V

-100

nA

ON CHARACTERISTICS

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-16A (Note 2)

0.06

Ω

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-2.0

-4.0

V

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-25V, f=1.0MHz

1200

pF

Output Capacitance

COSS

520

pF

Reverse Transfer Capacitance

CRSS

250

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

ID=-16A, VDS=-44V, VGS=-10V

(Note 2)

63

nC

Gate-to-Source Charge

QGS

13

nC

Gate-to-Drain ("Miller") Charge

QGD

29

nC

Turn-ON Delay Time

tD(ON)

VDD=-28V, ID=-16A, RG=6.8Ω

RD=1.6Ω (Note 2)

14

ns

Rise Time

tR

66

ns

Turn-OFF Delay Time

tD(OFF)

39

ns

Fall Time

tF

63

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body Diode Continuous Source

Current

IS

-31

A

Maximum Body-Diode Pulsed Current

(Note 1)

ISM

-110

A

Drain-Source Diode Forward Voltage

VSD

TJ=25°C, IS=-16A, VGS=0V

(Note 2)

-1.3

V

Body Diode Reverse Recovery Time

tRR

TJ=25°C, IF=-16A,

di/dt=-100A/µs (Note 2)

71

110

ns

Body Diode Reverse Recovery Charge

QRR

170

250

nC

Note: 1. Repetitive rating; pulse width limited by max. junction temperature.

2. Pulse width≤300µs; duty cycle≤2%.

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