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UF9Z34G-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UF9Z34G-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UF9Z34 Preliminary POWER MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-843.A ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -55 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous VGS=-10V, TC=25°C ID -17 A VGS=10V, TC=100°C -12 A Pulsed (Note 2) IDM -68 A Avalanche Current (Note 2) IAR -10 A Avalanche Energy Single Pulse (Note 3) EAS 180 mJ Repetitive (Note 2) EAR 5.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -6.7 V/ns Power Dissipation (TC=25°C) PD 56 W Linear Derating Factor 0.37 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Starting TJ=25°C, L=3.6mH, RG=25Ω, IAS=-10A. 3. ISD≤-10A, di/dt≤-290A/µs, VDD≤BVDSS, TJ≤150°C. 4. Pulse width≤300µs; duty cycle≤2%. THERMAL RESISTANCE PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °C/W Junction to Case θJC 2.7 °C/W |
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