Electronic Components Datasheet Search |
|
AP01L60AT Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
|
AP01L60AT Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 5 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 600V ▼ Fast Switching Characteristics RDS(ON) 12Ω ▼ Simple Drive Requirement ID 160mA Description Absolute Maximum Ratings Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TA=25℃ Continuous Drain Current, VGS @ 10V mA ID@TA=100℃ Continuous Drain Current, VGS @ 10V mA IDM Pulsed Drain Current 1 mA PD@TA=25℃ Total Power Dissipation W TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 150 ℃/W Data & specifications subject to change without notice 600 Parameter 201023073-1/4 Storage Temperature Range -55 to 150 RoHS-compliant Product -55 to 150 300 0.83 100 160 Parameter Rating AP01L60AT ± 30 G D S TO-92 G D S Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. The TO-92 package is widely used for commercial-industrial applications. |
Similar Part No. - AP01L60AT_10 |
|
Similar Description - AP01L60AT_10 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |