Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Low Gate Charge

600V

▼ Fast Switching Characteristics

12Ω

▼ Simple Drive Requirement

160mA

Description

Absolute Maximum Ratings

Symbol

Units

Drain-Source Voltage

V

Gate-Source Voltage

V

mA

mA

Pulsed Drain Current

1

mA

Total Power Dissipation

W

℃

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

150

℃/W

Data & specifications subject to change without notice

600

Parameter

201023073-1/4

Storage Temperature Range

-55 to 150

RoHS-compliant Product

-55 to 150

300

0.83

100

160

Parameter

Rating

AP01L60AT

± 30

G

D

S

TO-92

G

D

S

Advanced Power MOSFETs utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient and cost-

effectiveness device.

The TO-92 package is widely used for commercial-industrial applications.