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ISL70227MHEVAL1Z Datasheet(PDF) 6 Page - Intersil Corporation

Part # ISL70227MHEVAL1Z
Description  36V Rad Hard Dual Precision Operational Amplifier
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

ISL70227MHEVAL1Z Datasheet(HTML) 6 Page - Intersil Corporation

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ISL70227SEH
6
FN7958.1
August 24, 2012
TRANSIENT RESPONSE
SR
Slew Rate
AV = 10, RL = 2kΩ, VO = 4VP-P
±2.5
±3.6
V/µs
±2.0
V/µs
tr, tf, Small
Signal
Rise Time
10% to 90% of VOUT
AV = -1, VOUT = 100mVP-P,
Rf = Rg = 2kΩ, RL = 2kΩ to VCM
36
100
ns
100
ns
Fall Time
90% to 10% of VOUT
AV = -1, VOUT = 100mVP-P,
Rf = Rg = 2kΩ, RL = 2kΩ to VCM
100
ns
100
ns
ts
Settling Time to 0.1%
10V Step; 10% to VOUT
AV = -1, VOUT = 10VP-P,
Rg = Rf = 10k, RL = 2kΩ to VCM
3.4
µs
Settling Time to 0.01%
10V Step; 10% to VOUT
AV = -1, VOUT = 10VP-P,
RL = 2kΩ to VCM
3.8
µs
tOL
Output Overload Recovery Time
AV = 100, VIN = 0.2V,
RL = 2kΩ to VCM
1.7
µs
OS+
Positive Overshoot
AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL =2kΩ to VCM
20
%
35
%
OS-
Negative Overshoot
AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL =2kΩ to VCM
20
%
35
%
Electrical Specifications V
S ±5V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply over the operating
temperature range, -55°C to +125°C.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
(Note 5)
TYP
MAX
(Note 5)
UNIT
VOS
Offset Voltage
-10
µV
TCVOS
Offset Voltage Drift
.1
µV/
°C
IOS
Input Offset Current
1
nA
IB
Input Bias Current
1nA
CMRR
Common-Mode Rejection Ratio
VCM = -3V to +3V
120
dB
PSRR
Power Supply Rejection Ratio
VS = ±2.25V to ±5V
125
dB
AVOL
Open-Loop Gain
VO = -3V to +3V
RL = 10kΩ to ground
1500
V/mV
VOH
Output Voltage High
RL = 10kΩ to ground
3.65
V
RL = 2kΩ to ground
3.5
V
VOL
Output Voltage Low
RL = 10kΩ to ground
-3.65
V
RL = 2kΩ to ground
-3.5
V
IS
Supply Current/Amplifier
2.2
mA
ISC
Short-Circuit
±45
mA
Electrical Specifications V
S ±15V, VCM = 0, VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply over a
total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with
exposure at a low dose rate of <10mrad(Si)/s. (Continued)
PARAMETER
DESCRIPTION
CONDITIONS
MIN
(Note 5)
TYP
MAX
(Note 5)
UNIT


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