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US2305 Datasheet(PDF) 2 Page - ShenZhen XinDeYi Electronics Co., Ltd. |
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US2305 Datasheet(HTML) 2 Page - ShenZhen XinDeYi Electronics Co., Ltd. |
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2 / 4 page  Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V ΔB VDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-4.5A - - 53 mΩ VGS=-4.5V, ID=-4.2A - - 65 mΩ VGS=-2.5V, ID=-2.0A - - 100 mΩ VGS=-1.8V, ID=-1.0A - - 250 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - - V gfs Forward Transconductance VDS=-5V, ID=-2.8A - 9 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=55 oC) VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=-4.2A - 10.6 - nC Qgs Gate-Source Charge VDS=-16V - 2.32 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3.68 - nC td(on) Turn-on Delay Time 2 VDS=-15V - 5.9 - ns tr Rise Time ID=-4.2A - 3.6 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 32.4 - ns tf Fall Time RD=3.6Ω - 2.6 - ns Ciss Input Capacitance VGS=0V - 740 - pF Coss Output Capacitance VDS=-15V - 167 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 126 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-4.2A, VGS=0V, - 27.7 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 22 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. ± 12V ±100 Unitpoower US2305 |
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Similar Description - US2305 |
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