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IRF6648PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF6648PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF6648PbF 2 www.irf.com
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: Electrical Characteristic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.076 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 5.5 7.0 m Ω VGS(th) Gate Threshold Voltage 3.0 4.0 4.9 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 31 ––– ––– S Qg Total Gate Charge ––– 36 50 Qgs1 Pre-Vth Gate-to-Source Charge ––– 7.5 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.7 ––– nC Qgd Gate-to-Drain Charge ––– 14 21 Qgodr Gate Charge Overdrive ––– 12 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 17 ––– Qoss Output Charge ––– 21 ––– nC RG (Internal) Gate Resistance ––– 1.0 ––– Ω td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 29 ––– td(off) Turn-Off Delay Time ––– 28 ––– ns tf Fall Time ––– 13 ––– Ciss Input Capacitance ––– 2120 ––– Coss Output Capacitance ––– 600 ––– pF Crss Reverse Transfer Capacitance ––– 170 ––– Coss Output Capacitance ––– 2450 ––– Coss Output Capacitance ––– 440 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 81 (Body Diode) A ISM Pulsed Source Current ––– ––– 260 (Body Diode) g VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 31 47 ns Qrr Reverse Recovery Charge ––– 37 56 nC VDS = 25V Conditions See Fig. 16 & 17 VGS = 0V, VDS = 48V, f=1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VDS = VGS, ID = 150µA VDS = 60V, VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 17A i TJ = 25°C, IF = 17A, VDD = 30V di/dt = 100A/µs i See Fig. 18 TJ = 25°C, IS = 17A, VGS = 0V i ID = 17A VDS = 16V, VGS = 0V VDD = 30V, VGS = 10V i VGS = 0V ƒ = 1.0MHz ID = 17A RG= 6.2Ω VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V VDS = 10V, ID = 17A VDS = 30V MOSFET symbol showing the integral reverse p-n junction diode. |
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