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SPXR2010VLQ120R Datasheet(PDF) 9 Page - Freescale Semiconductor, Inc |
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SPXR2010VLQ120R Datasheet(HTML) 9 Page - Freescale Semiconductor, Inc |
9 / 119 page Introduction PXS20 Microcontroller Data Sheet, Rev. 1 Preliminary—Subject to Change Without Notice Freescale Semiconductor 9 1.5.4 Enhanced Direct Memory Access (eDMA) The enhanced direct memory access (eDMA) controller is a second-generation module capable of performing complex data movements via 16 programmable channels, with minimal intervention from the host processor. The hardware microarchitecture includes a DMA engine which performs source and destination address calculations, and the actual data movement operations, along with an SRAM-based memory containing the transfer control descriptors (TCD) for the channels. This implementation is used to minimize the overall block size. The eDMA module provides the following features: • 16 channels supporting 8-, 16-, and 32-bit value single or block transfers • Support variable sized queues and circular buffered queue • Source and destination address registers independently configured to post-increment or stay constant • Support major and minor loop offset • Support minor and major loop done signals • DMA task initiated either by hardware requestor or by software • Each DMA task can optionally generate an interrupt at completion and retirement of the task • Signal to indicate closure of last minor loop • Transfer control descriptors mapped inside the SRAM The eDMA controller is replicated for each processor. 1.5.5 On-Chip Flash Memory with ECC This device includes programmable, non-volatile flash memory. The non-volatile memory (NVM) can be used for instruction storage or data storage, or both. The flash memory module interfaces with the system bus through a dedicated flash memory array controller. It supports a 64-bit data bus width at the system bus port, and a 128-bit read data interface to flash memory. The module contains four 128-bit prefetch buffers. Prefetch buffer hits allow no-wait responses. Buffer misses incur a 3 wait state response at 120 MHz. The flash memory module provides the following features • 1 MB of flash memory in unique multi-partitioned hard macro • Sectorization: 16 KB + 2 × 48 KB + 16 KB + 2 × 64 KB + 2 × 128 KB + 2 × 256 KB • EEPROM emulation (in software) within same module but on different partition • 16 KB test sector and 16 KB shadow sector for test, censorship device and user option bits • Wait states: — 3 wait states at 120 MHz — 2 wait states at 80 MHz — 1 wait state at 60 MHz • Flash memory line 128-bit wide with 8-bit ECC on 64-bit word (total 144 bits) • Accessed via a 64-bit wide bus for write and a 128-bit wide array for read operations • 1-bit error correction, 2-bit error detection 1.5.6 On-Chip SRAM with ECC The PXS20 SRAM provides a general-purpose single port memory. ECC handling is done on a 32-bit boundary for data and it is extended to the address to have the highest possible diagnostic coverage including the array internal address decoder. The SRAM module provides the following features: • System SRAM: 128 KB |
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